1.3-µm GaAsSb/GaAs VCSELs

Philip Dowd; Shane R. Johnson; Sergio A. Chaparro; Stewart A. Feld; Matthew P. Horning; Martin Adamcyk; Yong-Hang Zhang

doi:10.1117/12.512732

8 December 2003 1.3-μm GaAsSb/GaAs VCSELs

Philip Dowd, Shane R. Johnson, Sergio A. Chaparro, Stewart A. Feld, Matthew P. Horning, Martin Adamcyk, Yong-Hang Zhang

Proceedings Volume 5248, Semiconductor Optoelectronic Devices for Lightwave Communication; (2003) https://doi.org/10.1117/12.512732
Event: ITCom 2003, 2003, Orlando, Florida, United States

Abstract

Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.

Citation Download Citation

Philip Dowd, Shane R. Johnson, Sergio A. Chaparro, Stewart A. Feld, Matthew P. Horning, Martin Adamcyk, and Yong-Hang Zhang "1.3-μm GaAsSb/GaAs VCSELs", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); https://doi.org/10.1117/12.512732

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