8 December 2003 Broadband semiconductor optical amplifiers and tunable semiconductor lasers
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Abstract
Nonidentical multiple quantum wells (MQWs) had been widely used for broadening the emission or gain bandwidth of semiconductor optical amplifiers (SOAs). However, the carrier distribution among the MQWs is not uniform, leading to nonuniform gain contributed from different QWs. Thus using nonidentical MQWs for broadband purpose is not intuitively straightforward. Several factors need to be carefully considered. Those factors include the QW sequence, electron/hole transport time across the separate confinement hetero-structure, as well as carrier capture time. In this work, we will discuss the design of MQWs for broadband SOAs. With properly designed nonidentical MQWs, the emission bandwidth could be nearly 400 nm. Also, the tuning range of semiconductor lasers could be extended to be over 200 nm.
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Ching-Fuh Lin, Ching-Fuh Lin, Yi-Shin Su, Yi-Shin Su, Fei-Hung Chu, Fei-Hung Chu, Chia-Wei Tsai, Chia-Wei Tsai, } "Broadband semiconductor optical amplifiers and tunable semiconductor lasers", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.512588; https://doi.org/10.1117/12.512588
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