8 December 2003 Development of GaInNAs-based 1.3-μm VCSEL
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In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arun Ramakrishnan, Arun Ramakrishnan, G. Ebbinghaus, G. Ebbinghaus, A. Lima, A. Lima, D. Supper, D. Supper, Guenter Kristen, Guenter Kristen, M. Popp, M. Popp, C. Degen, C. Degen, H.-L. Althaus, H.-L. Althaus, T. Killer, T. Killer, R. Scholz, R. Scholz, M. Melinde, M. Melinde, M. Sauter, M. Sauter, M. Weigert, M. Weigert, Henning Riechert, Henning Riechert, Gunther Steinle, Gunther Steinle, "Development of GaInNAs-based 1.3-μm VCSEL", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.510463; https://doi.org/10.1117/12.510463


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