8 December 2003 High-efficiency triggered photons using single-cavity mode coupling of single quantum dot emission
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Abstract
A high efficiency, triggered single photon source with applications to quantum communications is discussed. The sources is formed from an InAs-based quantum dot located in the center of a micropost cavity formed from GaAs, with top and bottom GaAs/AlAs distributive Bragg reflector pairs, and lateral processing. When pumped above band into the semiconductor host, correlation measurements show a reduction in the two-photon probability to 0.14, compared to unity for a Poisson source. The external efficiency of this structure is 0.24.
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Glenn S. Solomon, Glenn S. Solomon, Matthew Pelton, Matthew Pelton, Charles Santori, Charles Santori, David Fattal, David Fattal, Jelena Vuckovic, Jelena Vuckovic, Edo Waks, Edo Waks, Kyo Inoue, Kyo Inoue, Yoshihisa Yamamoto, Yoshihisa Yamamoto, } "High-efficiency triggered photons using single-cavity mode coupling of single quantum dot emission", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.512991; https://doi.org/10.1117/12.512991
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