25 February 2004 Development of dielectric and amorphous-silicon-based thin film coatings for room- and cryogenic temperature applications
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Abstract
This paper reports on the development of dielectric and amorphous silicon-based thin film stacks for applications at room and liquid nitrogen (LN) cryogenic temperatures. The deposition process was performed using assisted energetic evaporation processes such as Reactive Low Voltage Ion Plating (RLVIP) and Ion Assisted Deposition (IAD). Dielectric coatings produced by RLVIP exhibited fairly good stability at LN temperature. Indeed, as compared to room temperature, a spectral shift of ∇λ0.5 = -2.9 nm at half maximum was obtained for a 3-cavity bandpass filter centered at 1570 nm. Amorphous silicon and silicon dioxide stacks deposited by IAD processes were tested for optical applications. Amorphous silicon thin films showed good mechanical stability at LN temperature. The influence of deposition parameters and operating temperature on the electrical, mechanical and optical properties of amorphous Si films was investigated.
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Michel Poirier, Samir Ilias, Simon Thibault, Patrice Topart, Hubert Jerominek, "Development of dielectric and amorphous-silicon-based thin film coatings for room- and cryogenic temperature applications", Proc. SPIE 5250, Advances in Optical Thin Films, (25 February 2004); doi: 10.1117/12.513560; https://doi.org/10.1117/12.513560
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