19 February 2004 Design and fabrication of InAsSb detectors
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Proceedings Volume 5251, Detectors and Associated Signal Processing; (2004); doi: 10.1117/12.514204
Event: Optical Systems Design, 2003, St. Etienne, France
Abstract
A study of the optimisation of the detectivity of a mid infrared double heterostructures photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and give physical insight on the mechanisms dominating the dark current. The analysis is performed step by step in different structures, from a simple p-n junction to the full double heterostructures. The influence of temperature, barrier band gap energy and absorbing layer thickness in a double heterostructures, doping density in the active region on diffusion and generation-recombination mechanisms is analysed.
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Mathieu Carras, Gabrielle Marre, Borge Vinter, Jean Luc Reverchon, Vincent Berger, "Design and fabrication of InAsSb detectors", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); doi: 10.1117/12.514204; http://dx.doi.org/10.1117/12.514204
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KEYWORDS
Aluminum

Diffusion

Diodes

Gallium antimonide

Doping

Heterojunctions

Antimony

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