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19 February 2004 Megapixel HgCdTe MWIR focal plane array with a 15-um pitch
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In this paper we present the first demonstration at LETI infrared laboratory of a megapixel HgCdTe MWIR focal plane array with a 15μm pitch. The detectors were interconnected by indium bumps to the CMOS readout circuit. The design of these interconnections has been adapted from the standard CEA-LETI process to achieve resolution and uniformity required by the reduced pitch: the indium bumps scale 12μm width and 7μm height. Because of the important mechanical constraints induced by the size of the component, specific developments were necessary in order to achieve the hybridization process with an extremely reduced amount of defaults. The readout circuit was designed in a 3.3V /0.35μm CMOS technology. Its main features were to allow the validation of the hybridization and technological processes. A Megapixel IRCMOS has been mounted in a dewar and fully characterized at 77K exhibiting excellent electro-optical performances and an operability greater than 99.8%.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Castelein, Francois Marion, Jean-Luc Martin, Jacques Baylet, Norbert Moussy, Olivier Gravrand, Alain Durand, Jean-Paul Chamonal, and Gerard Destefanis "Megapixel HgCdTe MWIR focal plane array with a 15-um pitch", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004);


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