19 February 2004 Monolithic diffractive interference detector on silicon
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Proceedings Volume 5251, Detectors and Associated Signal Processing; (2004); doi: 10.1117/12.513694
Event: Optical Systems Design, 2003, St. Etienne, France
Abstract
The presented interference detector comprises a standard pn junction in a silicon substrate and a corrugation grating engraved at its surface. Two beams with unknown phase difference impinge onto the detector under the Littrow condition for some diffraction order of the grating. The detected power exhibits a non-zero AC component as the relative phase between the incident beams changes. The present paper describes the operation principle and brings the evidence of non-zero interference contrast in the application case of a displacement sensor.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yves Jourlin, Stephanie Reynaud, Nathalie Destouches, Alexandre V. Tishchenko, Sabine Fourment, Philippe Arguel, Francoise Lozes, Gerard Sarrabayrouse, Jerome Valentin, "Monolithic diffractive interference detector on silicon", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); doi: 10.1117/12.513694; https://doi.org/10.1117/12.513694
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KEYWORDS
Sensors

Diffraction gratings

Silicon

Diffraction

Polarization

Modeling

Photodetectors

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