19 February 2004 Photodetector with giant internal current amplification: experiment and numerically calculated model
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Proceedings Volume 5251, Detectors and Associated Signal Processing; (2004); doi: 10.1117/12.512861
Event: Optical Systems Design, 2003, St. Etienne, France
Abstract
New silicon based optical sensors with a metal - insulator - semiconductor structure (MIS) are developed and investigated both theoretically and experimentally. The physical properties of these sensors are described with a model of MIS capacitor where a presence of depletion layer of electrons and an inversion layer of holes of a finite depth is taken into account. Two-level voltage bias provides a transient between two quasi-equilibrium inversion modes. This transient is applied both for storage and for readout of the input optical signal for quantitative measurements of a weak infra red radiation. Proposed simple readout procedure provides reading the integrated information with a significant amplification. The amplification (or the current transformation coefficient) is determined by the ratio of integration and readout times and it may exceed 104. A theoretical model is given to explain a behavior of the sensor under storage by thermo generated carries and by photo generated ones jointly. Numerical simulations are of an agreement with experimental investigations of proposed sensors.
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Aleksandr Malik, Volodymyr Grimalsky, Alfonso Jacome Torres, Carlos Zuniga, D. Durini, "Photodetector with giant internal current amplification: experiment and numerically calculated model", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); doi: 10.1117/12.512861; http://dx.doi.org/10.1117/12.512861
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KEYWORDS
Silicon

Sensors

Capacitors

Dielectrics

Interfaces

Electrons

Semiconductors

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