2 September 2003 Imprint structured organic thin film transistors as driving circuit in single-use sensor applications
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Proceedings Volume 5253, Fifth International Symposium on Instrumentation and Control Technology; (2003) https://doi.org/10.1117/12.521463
Event: Fifth International Symposium on Instrumentation and Control Technology, 2003, Beijing, China
Abstract
Organic thin film transistors on silicon substrate are fabricated by standard lithography techniques to get transistors with micrometer scale gate length. The semiconducting layer consists of the evaporated organic molecule Pentacene. Transistor parameters taken from transistors with channel lengths of 10 μm - 1 μm confirm the validity of the models for silicon MOS transistors. For further reduction in channel length the imprint technique is proposed to integrate sub micron distances between the drain and source metallization of the transistor.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
U. Hilleringmann, U. Hilleringmann, C. Pannemann, C. Pannemann, } "Imprint structured organic thin film transistors as driving circuit in single-use sensor applications", Proc. SPIE 5253, Fifth International Symposium on Instrumentation and Control Technology, (2 September 2003); doi: 10.1117/12.521463; https://doi.org/10.1117/12.521463
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