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2 September 2003 Large-area definition of nanoelectrodes by nanoimprint lithography
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Proceedings Volume 5253, Fifth International Symposium on Instrumentation and Control Technology; (2003) https://doi.org/10.1117/12.521470
Event: Fifth International Symposium on Instrumentation and Control Technology, 2003, Beijing, China
Abstract
Sidewall lithography was used as a low cost fabrication process for high aspect ratio stamps for hot embossing. The stamps, featuring up to 1 μm pattern height and an aspect ratio of about 5:1 were tested in a typical hot embossing process at 50 bar. Mechanical stability of the crystalline stamp structures was achieved after optimization of the respective dry etch process. At imprint temperatures of 140°C PMMA was imprinted over areas of four inch diameter. After residual layer removal in the trenches Al electrodes of 500 nm height and 200 nm width could be defined by evaporation and lift off.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthias Wissen, Hella-Christin Scheer, Hubert Schulz, J. T. Horstmann, M. Scherff, and Wolfgang R. Fahrner "Large-area definition of nanoelectrodes by nanoimprint lithography", Proc. SPIE 5253, Fifth International Symposium on Instrumentation and Control Technology, (2 September 2003); https://doi.org/10.1117/12.521470
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