2 September 2003 Piezoresistive pressure sensors in CVD diamond for high-temperature applications
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Proceedings Volume 5253, Fifth International Symposium on Instrumentation and Control Technology; (2003) https://doi.org/10.1117/12.521928
Event: Fifth International Symposium on Instrumentation and Control Technology, 2003, Beijing, China
Abstract
The fabrication of piezo-resistive pressure sensors for high temperature applications by the selective removal of CVD-diamond is limited due to the jutting physical properties of this material, which result in insufficient etching rates. A novel technique with distinctly increased etching rates due to a modified sample arrangement inside of a commercially available reactive ion etching (RIE) reactor overcomes this limitation by a restricted plasma volume. Rates up to 334 nm/min imply an increase of more than one order of magnitude in comparison with additional measurements utilizing a standard etching technique. Furthermore, the electrical response of a fabricated sensor on pressure is demonstrated.
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Ralf Otterbach, Ralf Otterbach, Ulrich Hilleringmann, Ulrich Hilleringmann, } "Piezoresistive pressure sensors in CVD diamond for high-temperature applications", Proc. SPIE 5253, Fifth International Symposium on Instrumentation and Control Technology, (2 September 2003); doi: 10.1117/12.521928; https://doi.org/10.1117/12.521928
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