17 December 2003 Advanced FIB mask repair technology for 90-nm/ArF lithography: III
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Abstract
The SIR5000 mask repair system was developed with an FIB system featuring new ion optics, modified SED detectors, new platform software and optimized repair processes to repair 130nm/ArF generation masks. Thereafter we have continuously improved it for 90nm/ArF lithography and evaluated its performance such as edge placement repeatability, lithography simulation and printing tests. The transmittance of FIB imaging area is more than 95% over 70 times scans, and the printing result data also shows that the imaging damage by FIB scans little affect CD until around 70 times. The ED windows of both repaired clear and opaque defects almost overlap non repaired reference ones, and they show that the printing performance of repaired mask does not have any printing issues. Consequently, we demonstrated that the improved SIR5000 capability has reached the 90nm node mask technology requirement.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiyuki Tanaka, Yoshiyuki Tanaka, Yasutoshi Itou, Yasutoshi Itou, Nobuyuki Yoshioka, Nobuyuki Yoshioka, Ryoji Hagiwara, Ryoji Hagiwara, Anto Yasaka, Anto Yasaka, Osamu Takaoka, Osamu Takaoka, Tomokazu Kozakai, Tomokazu Kozakai, Yoshihiro Koyama, Yoshihiro Koyama, Hiroshi Sawaragi, Hiroshi Sawaragi, Yasuhiko Sugiyama, Yasuhiko Sugiyama, Masashi Muramatsu, Masashi Muramatsu, Toshio Doi, Toshio Doi, Katsumi Suzuki, Katsumi Suzuki, Mamoru Okabe, Mamoru Okabe, Masashi Shinohara, Masashi Shinohara, Osamu Matsuda, Osamu Matsuda, Kazuo Aita, Kazuo Aita, Tatsuya Adachi, Tatsuya Adachi, Yasutaka Morikawa, Yasutaka Morikawa, Masaharu Nishiguchi, Masaharu Nishiguchi, Yasushi Satoh, Yasushi Satoh, Naoya Hayashi, Naoya Hayashi, } "Advanced FIB mask repair technology for 90-nm/ArF lithography: III", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518026; https://doi.org/10.1117/12.518026
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