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17 December 2003 Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65-nm device mode
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The minimum gate pitch for the 65nm device node will push 193nm lithography toward k1 ~ 0.35 with NA = 0.85. Previous work has analyzed the challenges expected for this generation. However, in the simplest terms, optical lithography for the 65nm node will be difficult. Lithographers are, therefore, looking into high-transmission attenuated phase shift mask (high-T attPSM), where T > 14%, to improve process margins. The benefits of a high-t attPSM are substantial, but drawbacks like inspection difficulty, defect free blanks manufacture, and sidelobe printing may make the use of such masks impractical. One possible solution to this problem is to employ medium transmission (med-T) attPSM, such as T = 9%, to image critical levels of the 65nm node with 193nm lithography. Earlier work shows that the problems High-T attPSMs face are manageable for med-T attPSM. Sidelobe printing in particular will be treated in this work with simulation and experiment. A primary goal of this effort is to determine if the lithographic benefit of moving from industry-standard 6% attPSM to 9% attPSM is worth the risks associated with such a transition. This goal will be met through a direct comparison of experimental 0.75NA 193nm λ results for 6% versus 9% attPSM on gate, contact/via, and metal layers at 65nm generation target dimensions with leading edge resists. Additional information on the inspectability and reticle blank manufacture of % AttPSM will also be given to provide a cohesive analysis of the transition tradeoffs.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick K. Montgomery, Kevin D. Lucas, Lloyd C. Litt, Will Conley, Eric Fanucchi, Johannes Van Wingerden, Geert Vandenberghe, Vincent Wiaux, Darren Taylor, Michael J. Cangemi, and Bryan Kasprowicz "Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65-nm device mode", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518022;


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