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17 December 2003 DUV inspection capability for 90-nm node mask in ArF lithography
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Abstract
As the ArF lithography technology is going to progress to 90nm node from 130nm node, it has been more difficult to inspect all types of mask defects, which influence wafer. Photomask for 90nm node, the aggressive OPC mask and Phase Shift Mask (PSM) might be inevitable in production devices due to the slow progresses in lithography equipment itself compared to shrinkage speed in device manufacturing. Recently, due to the similiar effect such like MEEF (Mask Error Enhancement Factor) phenomenon many mask defects become to detect difficult even printable defects even the lots of improvements mask inspection equipments. In this paper, we will present the inspection capability of advanced DUV inspection tool LM7000 (NEC) with various programmed defect masks (e.g. aggressive OPC masks, half-tone PSM, tri-tone PSM) with, and discuss the relationship between inspection sensitivity and mask defect printability.
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Katsumi Ohira, Byung Gook Kim, Keishi Tanaka, Nobuyuki Yoshioka, Motonari Tateno, Naohisa Takayama, Shingo Murakami, Keiichi Hatta, Shinji Akima, Fuyuhiko Matsuo, and Masao Otaki "DUV inspection capability for 90-nm node mask in ArF lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518293
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