17 December 2003 DUV mask writer for BEOL 90-nm technology layers
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Abstract
Mask CD resolution and uniformity requirements for back end of line (BEOL) layers for the 90nm Technology Node push the capability of I-line mask writers; yet, do not require the capability offered by more expensive 50KeV ebeam mask writers. This suite of mask layers seems to be a perfect match for the capabilities of the DUV mask writing tools, which offer a lower cost option to the 50KeV platforms. This paper will evaluate both the mask and wafer results from all three platforms of mask writers (50KeV VSB,ETEC Alta 4300TM DUV laser and ETEC Alta 3500TM I-line laser) for a Cypress 90nm node Metal 1 layer, and demonstrate the benefits of the DUV platform with no change to OPC for this layer.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongsung Hong, Dongsung Hong, Prakash Krishnan, Prakash Krishnan, Dianna Coburn, Dianna Coburn, Nazneen Jeewakhan, Nazneen Jeewakhan, Shengqi Xie, Shengqi Xie, Joshua Broussard, Joshua Broussard, Bradley Ferguson, Bradley Ferguson, Kent G. Green, Kent G. Green, Peter Buck, Peter Buck, Curt A. Jackson, Curt A. Jackson, Larry Martinez, Larry Martinez, } "DUV mask writer for BEOL 90-nm technology layers", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518051; https://doi.org/10.1117/12.518051
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