Translator Disclaimer
Paper
17 December 2003 Dehydration bake effects with UV/O3 treatment for 130-nm node PSM processing
Author Affiliations +
Abstract
As feature sizes of phase shift mask (PSM) have dropped below half-micron, resist adhesion have become a more critical issue, especially during second level lithography. Second writing process requires special consideration, because the resist's mechanical strength of resists on patterned chrome and patterned glass is smaller in comparison to that on the un-patterned chrome blank. If the adhesion strength is not sufficient to withstand the stress during subsequent processes, patterns will be damaged during second level lithography. Resists stress at pattern edges that subsequent processes, pattern will be damaged during second level lithography. Resist stress at pattern edges that weaken its adhesive property, together with the low mechanical strength of resists on glass, creates ample probability for the unwanted phenomenon in PSM process. In this paper, we investigate the effects of property and adhesive strength of resists on surfaces at different treatment before resist coating process, and observe the defects generation after different treatment.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong-Dae Kim, Dong-Seuk Lee, Dong-Il Park, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, and Sang-Soo Choi "Dehydration bake effects with UV/O3 treatment for 130-nm node PSM processing", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.517977
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

New grade of 9 inch size mask blanks for 450mm...
Proceedings of SPIE (November 11 2015)
Quartz 9 inch size mask blanks for ArF PSM (Phase...
Proceedings of SPIE (July 13 2017)
Phase defects on DUV alternating PSMs
Proceedings of SPIE (July 19 2000)
AAPSM repair utilizing transparent etch stop layer
Proceedings of SPIE (December 06 2004)

Back to Top