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17 December 2003 EUV mask simulation for AIMS
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The objective of this paper is to assess how variations of the chief ray angle of the illumination light incident on an EUV multilayer mask as well as the light bandwidth affect the performance of an AIMS EUV tool with respect to CD measurement and defect evaluation. To this end EUV images were simulated with an EUV lithography simulator developed by the Fraunhofer Institute IISB. The simulations were performed for a multilayer mask with a buried defect under an isolated line. The specifics of the AIMS EUV were taken into account by a superposition of aerial images obtained for different wavelengths. The presentation discusses the simulations and their results.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roman Windpassinger, Norbert Rosenkranz, Thomas Scherubl, Peter Evanschitzky, Andreas Erdmann, and Axel Zibold "EUV mask simulation for AIMS", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);

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