17 December 2003 EUV substrate and blank inspection with confocal microscopy
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Abstract
One of the key challenges for the successful implementation of EUV Lithography (EUVL) is the supply of defect free mask blanks. Obviously a reliable defect inspection is a prerequisite to achieve this goal. We report results from a EUVL blank inspection tool developed by Lasertec. The inspection principle of this tool is based on confocal microscopy at 488nm inspection wavelength. On quartz substrates a sensitivity of 60nm is demonstrated. On buried defects in the multilayer stack a reasonable capture rate down to approximately 25nm defect height has been measured. We compare these results to previously reported data on the wafer version (M350) of the current M1350.
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Jan-Peter Urbach, Jan-Peter Urbach, Jan F. W. Cavelaars, Jan F. W. Cavelaars, Hal Kusunose, Hal Kusunose, Ted Liang, Ted Liang, Alan R. Stivers, Alan R. Stivers, } "EUV substrate and blank inspection with confocal microscopy", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518388; https://doi.org/10.1117/12.518388
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