17 December 2003 Flows for model-based layout correction of mask proximity effects
Author Affiliations +
Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003); doi: 10.1117/12.518477
Event: Photomask Technology, 2003, Monterey, California, United States
Abstract
In this paper, we will investigate methods for adapting model-based OPC tools to do layout correction (biasing) for mask makgin proximity effects. (Mask Proximity Correction). We will discuss three aspects of this problem: (1) typical models to use for mask making; (2) calibration of the model using mask measurement data; (3) one-pass versus two-pass flows for correction of mask making proximity effects.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicolas B. Cobb, Wilhelm Maurer, "Flows for model-based layout correction of mask proximity effects", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518477; https://doi.org/10.1117/12.518477
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Photomasks

Data modeling

Mask making

Optical proximity correction

Calibration

Convolution

Semiconducting wafers

Back to Top