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17 December 2003 Focus latitude optimization for model-based OPC
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Abstract
Variations in manufacturing process introduce uncertainties optical proximity correction. Discrepancies may arise between model extraction and the actual manufacturing conditions. An optimally constructed mask should minimize the sensitivity of line width variation in lithography and prevent pattern failure such a line pinch-off. In this paper, the effect of defocus on OPC mask and wafer patterning is investigated using a physical pattern transfer simulator, LithoScope. We evaluate the impact of defocus on a set of special test patterns and on a real circuit layout. We propose to control defocus effect by a combination of proper design centering and physical model-based data verification.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qi-De Qian and Shinichi Takase "Focus latitude optimization for model-based OPC", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.517996
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