17 December 2003 Global CD uniformity improvement in mask manufacturing for advanced lithography
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Abstract
The control of global critical dimension uniformity (GCDU) across the entire mask becomes an important factor for the high-end masks quality. Three major proceses induce GCDU error before after-developing inspection (ADI) including the E-Beam writing, baking, and developing processes. Due to the charging effect, the fogging effect, the vacuum effect and other not-well-known effects, the E-Beam writing process suffers from some consistent GCDU errors. Specifically, the chemical amplified resist (CAR) induces the GCDU error from improper baking. This phenomenon becomes worse with negative CARs. The developing process is also a source of the GCDU error usually appears radially. This paper reports the results of the study of the impact of the global CD uniformity on mask to wafer images. It also proposes solutions to achieve better masks.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shih-Ming Chang, Chih-Cheng C. Chin, Wen-Chuan Wang, Chi-Lun Lu, Ren-Guey Hsieh, Cherng-Shyan Tsay, Yung-Sung Yen, Sheng-Chi Chin, Hsin-Chang Lee, Ru-Gun Liu, Kuei-Shun Chen, Hung-Chang Hsieh, Yao Ching Ku, and John C.H. Lin "Global CD uniformity improvement in mask manufacturing for advanced lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518008; https://doi.org/10.1117/12.518008
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