17 December 2003 High-resolution reticle inspection technique providing a complete reticle qualification solution in advanced 90-nm node wafer fabs
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Abstract
High-resolution contamination inspection for advanced reticles remains crucial in light of the increasing trend of progressive defects such as crystal growth, etc., introduced with DUV lithography, especially for low k1 processes. In most fab environments, routine incoming and re-qualification inspections for photomasks have been implemented. But although this high-resolution inspection provides necessary high-sensitivity, on advanced photomasks it often introduces inspection challenges. Aggressive OPCs and dense primary and secondary geometries are some of the many factors that can result in false-defect problems for the inspection systems. Thus, inspection needs to be desensitized. As an effort to identify a methodology to provide the inspectability while maintaining the necessary high-sensitivity, a characterization has been performed to evaluate a new combination- mode inspection. This technical paper will list the details of this special contamination inspection technique that will allow users to maintain the same high inspection throughput while providing similar or higher resolution inspection for these advanced reticles with superior inspectability.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louie Liu, Louie Liu, Chi-Horng Liao, Chi-Horng Liao, Yi-Ming Dai, Yi-Ming Dai, Jyh-Ching Lin, Jyh-Ching Lin, Kaustuve Bhattacharyya, Kaustuve Bhattacharyya, Yao-Tsu Huang, Yao-Tsu Huang, Kong Son, Kong Son, Den Wang, Den Wang, } "High-resolution reticle inspection technique providing a complete reticle qualification solution in advanced 90-nm node wafer fabs", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518539; https://doi.org/10.1117/12.518539
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