Mask challenges and capability development for the 65-nm device technology node: the first status report

Won D. Kim; Christopher M. Aquino; Mark D. Eickhoff; Phillip Lim; Nobuhiko Fukuhara; Scott W. Jessen; Yasutaka Kikuchi; Junichi Tanzawa

doi:10.1117/12.518205

17 December 2003 Mask challenges and capability development for the 65-nm device technology node: the first status report

Won D. Kim, Christopher M. Aquino, Mark D. Eickhoff, Phillip Lim, Nobuhiko Fukuhara, Scott W. Jessen, Yasutaka Kikuchi, Junichi Tanzawa

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518205
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

The slow progress of the 157nm-F₂ laser exposure tool development results in broad adaptation of high numerical aperture (NA>0.8) 193nm-ArF lithography for the 65nm-node production solution. This decision, however, forces lithographers to increase dependency on very aggressive RET technologies. This in turn demands mask making capabilities the industry has never faced before such as 100nm (@4X on mask scale) size Sub Resolution Assist Features (SRAF). This report covers our early work on our mask making capability development for the 65nm-node process technology development cycle for production in 2005. Our report includes the 65nm node mask technology capability development status for mask CD and registration dimensions control, current inspection capability/issues and development efforts for critical layer masks with aggressive RET (especially of EAPSM with SRAF).

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Won D. Kim, Christopher M. Aquino, Mark D. Eickhoff, Phillip Lim, Nobuhiko Fukuhara, Scott W. Jessen, Yasutaka Kikuchi, and Junichi Tanzawa "Mask challenges and capability development for the 65-nm device technology node: the first status report", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518205

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