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17 December 2003 Mask challenges and capability development for the 65-nm device technology node: the first status report
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Abstract
The slow progress of the 157nm-F2 laser exposure tool development results in broad adaptation of high numerical aperture (NA>0.8) 193nm-ArF lithography for the 65nm-node production solution. This decision, however, forces lithographers to increase dependency on very aggressive RET technologies. This in turn demands mask making capabilities the industry has never faced before such as 100nm (@4X on mask scale) size Sub Resolution Assist Features (SRAF). This report covers our early work on our mask making capability development for the 65nm-node process technology development cycle for production in 2005. Our report includes the 65nm node mask technology capability development status for mask CD and registration dimensions control, current inspection capability/issues and development efforts for critical layer masks with aggressive RET (especially of EAPSM with SRAF).
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won D. Kim, Christopher M. Aquino, Mark D. Eickhoff, Phillip Lim, Nobuhiko Fukuhara, Scott W. Jessen, Yasutaka Kikuchi, and Junichi Tanzawa "Mask challenges and capability development for the 65-nm device technology node: the first status report", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518205
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