17 December 2003 Mask-making study for the 65-nm node
Author Affiliations +
The specifications of mask critical dimension (CD) have become much tighter for sub-100nm nodes to satisfy wafer CD uniformity requirements. The small patterns produced by aggressive optical proximity correction compound the difficulty, thereby necessitating the use of e-beam writers in combination with chemical amplified resists (CARs). Challenges of resists include post coating delay (PCD), post exposure delay (PED) in vacuum, and strong post exposure bake (PEB) sensitivity. CD errors are classified into localized area and global ones; machines causing each type of errors are then identified. Focus variation and fogging effect have to be emphasized for the 65-nm requirements. Although the DOF of e-beam systems is larger than that of the optical systems, high current density and/or plate-to-plate deviation may cause focus variation to result in poor CD uniformity. Therefore, dosage optimization is necessary for getting the best focus. The fogging effective level is around 3~10 nm at various pattern loadings. The paper presents, quantitative results and the methodology leading to them.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jieh-Jang Chen, Jieh-Jang Chen, Hsin-Chang Lee, Hsin-Chang Lee, Chi-Lun Lu, Chi-Lun Lu, Ren-Guey Hsieh, Ren-Guey Hsieh, Wen-Chi Chen, Wen-Chi Chen, Hung-Chang Hsieh, Hung-Chang Hsieh, Burn-Jeng Lin, Burn-Jeng Lin, } "Mask-making study for the 65-nm node", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518285; https://doi.org/10.1117/12.518285


ArF lithography for printing 100 nm gates on low volume...
Proceedings of SPIE (September 14 2001)
Fogging and pattern loading effect by writing strategy
Proceedings of SPIE (August 01 2002)
Plasma etch of AZ5206 Cr and ZEP7000 Cr for 0.18...
Proceedings of SPIE (September 01 1998)
Dry etch proximity modeling in mask fabrication
Proceedings of SPIE (August 28 2003)
Analysis of dry etch loading effect in mask fabrication
Proceedings of SPIE (March 11 2002)

Back to Top