17 December 2003 Mask pattern fidelity quantification
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Abstract
In this paper, a quantitative evaluation of mask quality in the domain of 2D pattern fidelity and a method of assessing the OPC model effectiveness are investigated. The spirit of our algorithm is to characterize the wafer lithographic performances of both the real physical mask and the ideal OPCed layout mask that the physical mask is based on. To acquire these performances, we adopted a CD-SEM image process technique for transforming an actual SEM mask image into a simulation-friendly format like GDSII together with the methods to correctly handle the image transformation and interpret the simulation results. Finally, the images, such as the simulated aerial images, the simulated or observed resist top views, are superposed for comparison using logic operation.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Chuan Wang, Wen-Chuan Wang, Shih-Ming Chang, Shih-Ming Chang, Chih-Cheng C. Chin, Chih-Cheng C. Chin, Chi-Lun Lu, Chi-Lun Lu, Angus S.J. Chin, Angus S.J. Chin, Hung-Chang Hsieh, Hung-Chang Hsieh, Shinn-Sheng Yu, Shinn-Sheng Yu, } "Mask pattern fidelity quantification", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518041; https://doi.org/10.1117/12.518041
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