17 December 2003 Mask patterning technology with KrF photomask repeater
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Abstract
It is intended to evaluate the feasibility of 0.15μm generation mask fabrication with a KrF photomask repeater. Inter-field registration accuracy(3sigma) is 28nm in X direction and 45nm in Y direction on a daughter mask in the KrF photomask repeater process and that is out of the registration specification(3sigma 30nm) of 0.15μm generation mask. The intra-field registration accuracy(3sigma) within a 18.4mm × 23.0mm field on a daughter mask is about 9nm with compensation of mis-registration to a mother mask. Inter-field CD uniformity(3sigma) is 8nm on a daughter mask and intra-field CD uniformity(3sigma) can be improved into 15nm with the compensation of CD error to a mother mask. Pattern fidelity in the KrF photomask repeater is inferior to that of the e-beam process. Hence it is necessary to apply OPC pattern to a mother mask in order to fabricate the 0.15μm generation mask.
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Taejoong Ha, Taejoong Ha, Munki Lim, Munki Lim, Youngmo Lee, Youngmo Lee, Bo-Kyung Choi, Bo-Kyung Choi, Yongkyoo Choi, Yongkyoo Choi, Oscar Han, Oscar Han, } "Mask patterning technology with KrF photomask repeater", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518249; https://doi.org/10.1117/12.518249
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