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17 December 2003 New method for approaching the loading-free process for photomask Cr etching
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In photomask manufacturing, etch loading effect is one of the most serious problems. The equal size of isolated clear patterns, each of which is surrounded by different pattern density, can show different CD (critical dimension) results after Cr etching process. Furthermore, as the feature size decreases and pattern density increase, the burden of Cr loading effect in mask fabrication is more enlarged than ever. In this paper, we will present the new method for approaching to the loading free process in photomask Cr dry etch.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Il-Yong Jang, Jeong-Yun Lee, Sung-Yong Moon, Seong-Woon Choi, and Jung-Min Sohn "New method for approaching the loading-free process for photomask Cr etching", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);


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