17 December 2003 Optimization of nanomachining repair condition for ArF lithography
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Abstract
Nanomachining is a new technique for repairing photomask defects. The advantages of this technique are no substrate damage, precise edge placement position and Z height accuracy when compared with current Laser zapper or FIB GAE repair techniques. We have reported that this technique can be applied to any type of opaque film material defects, quartz bump defects on Alternating Aperture Phase Sifting Masks (AAPSM) and complex pattern defect repairs. In this report, we have evaluated about the optimization of Nanomachining condition for repairing most advanced photomasks for 193nm lithography on the materials of binary chrome and MoSi HT-PSM. Evaluation items are adequate edge position and Z height for targeting to achieve better printing performance when analyzed with an AIMS 193nm tool.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuyoshi Amano, Tsuyoshi Amano, Masaharu Nishiguchi, Masaharu Nishiguchi, Hiroyuki Hashimoto, Hiroyuki Hashimoto, Yasutaka Morikawa, Yasutaka Morikawa, Naoya Hayashi, Naoya Hayashi, Roy White, Roy White, Ron Bozak, Ron Bozak, Lee Terrill, Lee Terrill, } "Optimization of nanomachining repair condition for ArF lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518025; https://doi.org/10.1117/12.518025
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