17 December 2003 Reticle inspection optimization for 90-nm and 130-nm technology nodes using a multibeam UV wavelength inspection tool
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Abstract
As the lithography design rule of IC manufacturing industry migrates into sub-130nm nodes, low k1 factor prevails, the mask error enhancement factor (MEEF) increases. Low k1 processing calls for aggressive sub-resolution assist features and the use of attenuated phase shift masks (AttPSMs). The aggressive OPC features pose challenges to reticle inspection due to high false detection, which is time-consuming for defect classification and impacts the throughput of mask manufacturing. Moreover, the high transmission of the shifter material of 193 nm AttPSM also challenges the UV-based reticle inspection tools with high nuisance counts due to undesirable optical diffraction effects. For a given reticle inspection tool, it is necessary to calibrate the system contrast between the clear and opaque regions (quartz/chrome or quartz/MoSi) of the reticles. In this study, we present the influences of various calibration conditions on sensitivity, false and nuisance detection of reticle inspections. Both the STARlight contamination inspections and the die-to-die pattern inspections were carried out using the KLA-Tencor TeraStar inspection tools with production masks and programmed defect test masks including binary intensity masks (BIMs) and AttPSMs. Successful applications with low false detection and adapted sensitivity will be illustrated in terms of optimizing the calibration setup.
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Rick Lai, Rick Lai, Luke Hsu, Luke Hsu, Chiun Hong Kung, Chiun Hong Kung, Johnson Hung, Johnson Hung, Wei Hong Huang, Wei Hong Huang, Chue-San Yoo, Chue-San Yoo, Yao-Tsu Huang, Yao-Tsu Huang, Vincent Hsu, Vincent Hsu, } "Reticle inspection optimization for 90-nm and 130-nm technology nodes using a multibeam UV wavelength inspection tool", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518016; https://doi.org/10.1117/12.518016
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