17 December 2003 Second-level imaging of advanced alternating phase-shift masks using e-beam lithography
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Abstract
When e-beam lithography is applied for second level imaging of Alternating Phase Shift Masks charging effects on the cleared chrome absorber induces placement, overlay and pattern distortion of the second layer. The water soluble conductive to coat Showa Denko ESPACER 300Z has been evaluated in combination with the chemically amplified resist FEP171 for a charging eliminating patterning solution. Application of ESPACER on top of FEP171 kept the resist performance unchanged. Sensitivity, profile, resolution, CD-uniformity and post exposure delay of FEP171 have been investigated and no influence of ESPACER was detected. The bilayer system ESPACER and FEP171 was used for the second patterning of an altPSM test design and the technology performance was characterized. No difference has been figured out between placement of the second level and placement on a non-structured chrome layer. The achieved overlay accuracy proves the ESPACER/FEP171 combination as a promising approach for future altPSM manufacturing.
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Bernd Leibold, Bernd Leibold, Joerg Butschke, Joerg Butschke, Lutz Bettin, Lutz Bettin, Dirk Beyer, Dirk Beyer, Mathias Irmscher, Mathias Irmscher, Corinna Koepernik, Corinna Koepernik, Rainer Plontke, Rainer Plontke, Armelle Vix, Armelle Vix, Peter Voehringer, Peter Voehringer, } "Second-level imaging of advanced alternating phase-shift masks using e-beam lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518037; https://doi.org/10.1117/12.518037
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