17 December 2003 Study of alternating phase-shift mask structure for 65-nm node devices
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Abstract
To extend 193nm lithography to 65nm node devices, alternating phase shift mask structure were optimized. Both single trench and dual trench structure was evaluated. The optimization was performed by rigorous electro-magnetic field simulation of light scattering in 3D mask topographies. Evaluation masks were fabricated according to the simulation results, and the mask image was evaluated by using AIMS fab193 (Carl Zeiss). Prior to the optimization, limitation of shallow trench depth and undercut size was considered from the standpoint of “mask making”. Maximum undercut size was defined in order to prevent the Cr pattern peeling in cleaning process. In the optimized structure, CD difference between adjacent patterns with 0-space and π-space is within ±10nm wiht 300nm focus margin for different pattern pitches.
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Toshio Konishi, Tooru Komizo, Hiroyuki Takahashi, Motohiko Morita, Takashi Ohshima, Kazuaki Chiba, Yosuke Kojima, Jun Sasaki, Keishi Tanaka, Masao Otaki, Yoshimitsu Okuda, "Study of alternating phase-shift mask structure for 65-nm node devices", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.522180; https://doi.org/10.1117/12.522180
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