3 December 2003 Characterization of Ti-doped CdTe and Cd1-xHgxTe crystals
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Studies were carried out of the low-temperature optical and photoelectric properties of Ti-doped CdTe and Cd1-xHgxTe crystals. The absorption is due to intracentral transitions from the main 3A2(3F)-state to excited 3T1(3P)- (1.15 eV) and 3T1(3F)-(0.65 eV) states. It was shown that the maximum of photogalvanic current band corresponds to the energy 1.12 eV. It indicates that the excited 3T1(3P)-state of the Ti2+ ions is in the resonance with the conduction band and is located near the bottom at a distance not more than 50 meV. The analogous structure of the absorption and photogalvanic current spectra appear also the Cd1-xHgxTe:Ti crystals. In this case the long-wave edge of absorption band is some what prolonged. Therefore the use of Cd1-xHgxTe:Ti crystals makes it possible to move the spectral region of their photosensitivity to the long-wave side. On the base of the results of photoluminescence and photogalvanic current spectra it was shown that main structural defects for the investigated crystals are V Cd, and also acceptor complexes of type (V2-Cd + D+)-. These defects participate in compensation of charge in the investigated crystals, which are semiinsulating and therefore suitable for carrying out the photorefractive measurements.
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Yuriy P. Gnatenko, Yuriy P. Gnatenko, Ivan O. Faryna, Ivan O. Faryna, Petro M. Bukivskij, Petro M. Bukivskij, Roman V. Gamernyk, Roman V. Gamernyk, Nickolai V. Kukhtarev, Nickolai V. Kukhtarev, Tatiana V. Kukhtareva, Tatiana V. Kukhtareva, Stepan Yu. Paranchych, Stepan Yu. Paranchych, Lidia D. Paranchych, Lidia D. Paranchych, } "Characterization of Ti-doped CdTe and Cd1-xHgxTe crystals", Proc. SPIE 5257, Ninth International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals, (3 December 2003); doi: 10.1117/12.545851; https://doi.org/10.1117/12.545851

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