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15 December 2003 Electronically tunable semiconductor laser (ETL) based on silica Bragg reflectors
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Proceedings Volume 5260, Applications of Photonic Technology 6; (2003)
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada
We will report on a new type of tunable semiconductor laser, which is based on the electronic selection of one Bragg grating among an array of such gratings in silica. The device that we have built operates at 120 Mb/s but extension to 1 Gb/s for Gigabit-Ethernet applications would be straightforward. In comparison with tunable semiconductor lasers using gratings in the III-V materials, silica gratings offer two significant advantages: 1-wavelength stability and predictability, 2-the ability to phusically overlap many gratings in a compact space in order to enable the selection of a large number of wavelengths for wavelength division multiplexed communications systems. The time required to chagne the wavelength in our laser has not been measured for lack of the necessary electronics but it is expected to be in the microsecond range on the basis of a straightforward calculation. The robust all solid-state nature of our device and its expected microsecond random-access tuning capability make it a strong candidate for agile wavelength routed largely optical networks. With microsecond tuning of precisely and robustly defined wavelengths, optical routing would be possible on a packet basis in a network using state-of-the-art add/drop filters or other types of wavelength selective elements, such as arrayed waveguide gratings.
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Geoffroy Deltel, Michel A. Duguay, and Etienne Grondin "Electronically tunable semiconductor laser (ETL) based on silica Bragg reflectors", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003);

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