Translator Disclaimer
15 December 2003 Gamma-X band mixing in GaAs/AlAs superlattice
Author Affiliations +
Proceedings Volume 5260, Applications of Photonic Technology 6; (2003)
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada
GaAs/AlAs superlattices (SLs) were grown by MOCVD. The temperature dependence of photoluminescence was measured. The type II-transition dominated PL spectrum was achieved by controlling the layers thickness of GaAs and AlAs at low temperature. Such SLs with long carrier lifetime is very attractive for low crosstalk semiconductor optical amplifier applications.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guoyun Ru, Z. B. Chen, X. Yu, Fow-Sen Choa, Terrance Worchesky, F. Liu, C. Lu, and Jacob B. Khurgin "Gamma-X band mixing in GaAs/AlAs superlattice", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003);

Back to Top