Paper
15 December 2003 Growth and fabrication of an integrated DFB laser and EA modulator
Z. B. Chen, J. Cai, X. Ji, Yu Sun, Jie Lin, X. Zhao, X. Yu, J. Zhang, Fow-Sen Choa
Author Affiliations +
Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543546
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada
Abstract
By using the selective area growth (SAG) technique, the grating over growth technique, and the buried hetero-structure (BH) regrowth technique, we have successful fabricated integrated distributed feedback laser and electro-absorption modulator. A suitable tensile strain is introduced during the multiple quantum well (MQW) growth to compensate the compressive strain caused by the SAG effect. To obtain better control on the growth condition and grating coupling coefficient, a quaternary grating laser is used. The best DFB laser shows a threshold current of around 12 mA and slope efficiency up to 0.13 mW/mA from one facet.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. B. Chen, J. Cai, X. Ji, Yu Sun, Jie Lin, X. Zhao, X. Yu, J. Zhang, and Fow-Sen Choa "Growth and fabrication of an integrated DFB laser and EA modulator", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543546
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KEYWORDS
Modulators

Oxides

Fabrication

Waveguides

Laser damage threshold

Laser resonators

Manufacturing

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