15 December 2003 Nondestructive in-line monitoring method for diffusion process control in InP
Author Affiliations +
Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543541
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada
We report a non-destructive in-line monitoring method developed for Cd diffusion into InP on SACM-APD structure. Photocurrent vs voltage measurement are taken directly via proving diffused diodes on a wafer. We demonstrate that there is linear correlation between punch-through voltages Vpt on the photo I-V curves and diffusion depth measured by SIMS and Polaron profiles. It has been established that Vpt can be extracted easily from I-V curves and used for re-diffusion to approach target depth.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yahong Y.H. Qian, Yahong Y.H. Qian, Chris Pawlowicz, Chris Pawlowicz, Vlad Temchenko, Vlad Temchenko, Christina Elliott, Christina Elliott, Andrew Woodard, Andrew Woodard, Tedeusz Bryskiewicz, Tedeusz Bryskiewicz, Kim Kirkwood, Kim Kirkwood, Kevin Hewitt, Kevin Hewitt, "Nondestructive in-line monitoring method for diffusion process control in InP", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.543541; https://doi.org/10.1117/12.543541


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