15 December 2003 Study of N-type Si delta doping on InP and In0.53Ga0.47As
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Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543713
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada
Abstract
The method of using Si delta doping to obtain high n-type doping for InP and In0.53Ga0.47As lattice matched to InP was studied. With the multiple delta doping, we can obtain ~1019 cm-3 N-type doping for both the InP and InGaAs materials by using TMI, PH3, Si2H6 and TEGa precursors in Metalorganic Chemical Vapor Depositions growths. Current results show that the delta doping technique is critical for getting extremely high N-type doping in InP and InGaAs.
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J. Yan, G. Ru, Fow-Sen Choa, "Study of N-type Si delta doping on InP and In0.53Ga0.47As", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.543713; https://doi.org/10.1117/12.543713
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