Study of strain effect in MOCVD selective area growth

Guoyun Ru; X. Yu; Z. B. Chen; Fow-Sen Choa

doi:10.1117/12.544028

15 December 2003 Study of strain effect in MOCVD selective area growth

Guoyun Ru, X. Yu, Z. B. Chen, Fow-Sen Choa

Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.544028
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

Bulk InGaAs and InGaAsP and quantum well structure have been grown on different oxide pattern by MOCVD. We found that because of material composition variation caused by the oxide pattern compressive strain s built, so that the PL intensity is reduced. By introducing tensile strain to compensate for the compressive strain caused by the SAG effect, the PL intensity has been improved. Active and passive integrated devices can be fabricated without significantly suffering the material degradation by using this method.

Citation Download Citation

Guoyun Ru, X. Yu, Z. B. Chen, and Fow-Sen Choa "Study of strain effect in MOCVD selective area growth", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.544028

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