Suitability of II-VI semiconductors for photonic applications: common-anion versus common-cation superlattices

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doi:10.1117/12.543720

15 December 2003 Suitability of II-VI semiconductors for photonic applications: common-anion versus common-cation superlattices

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Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543720
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

Based on the sp³s tight-binding method, the electronic band strcutures of both common-anion and common-cation II-VI superlattices (SLs) are investigated. As models, we took for the former the case of CdTe/ZnTe(001) SLs where the common anion is confirmed to yield a vanishing or a small valence-band offset (VBO) and the biaxial strain, of course, contributes in the valence-band splittings and yield type-I SLs in most of the studied cases. Whereas, we tok as a second model two different SLs: the ZnS/ZnSe(001) and ZnSe/ZnTe(001) SLs. We have confirmed that the common-cation SLs cannot have a vanishing conduction-band offsets (CBO), as speculated, but rather the CBO could be as large as the VBO. The biaxial strain, again, can participate here in the formation of the band offsets and yield either type-I SLs, as in the case of the ZnS/ZnSe, or type-II SLs, as in the case of ZnSe/ZnTe. Moreover, the reason why some type-II SLs, such as ZnSe/ZnTe(001), could be useful as photonic devices is explained by the tendency of the carriers to confine near the interface as a result of a strong photoluminenscence data and conclusions have been drawn about the strain morpholgy and the structural and optical qualities of the experimental samples.

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Nacir Tit "Suitability of II-VI semiconductors for photonic applications: common-anion versus common-cation superlattices", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543720

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