The effect of contact resistance in a broadband semiconductor optical amplifier using SAG techniques

X. Zhao; Fow-Sen Choa

doi:10.1117/12.543847

15 December 2003 The effect of contact resistance in a broadband semiconductor optical amplifier using SAG techniques

X. Zhao, Fow-Sen Choa

Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543847
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

Ultra-broadband gain materials can be made by using selected area growth (SAG) techniques. Material gain peak along the waveguide can vary as much as 300nm (from 1300nm to 1600 nm) in InGaAsP/InP quantum well waveguides. This gain peak variation is obtained by both material composition changes and quantum well width changes. This kind of broad band materials can be used to make ultra broad tunable lasers, amplifiers, and wavelength converters. Due to large band gap variation, the current injection will not be constant along the waveguide. The average serial resistance perpendicular to the waveguide direction will play an important role in the current distribution. In our simulation, a large serial resistance device will have a uniform current injection, therefore a uniform carrier distribution. But for a small serial resistance device, the carrier distribution along the waveguide is mainly decided by the local waveguide material bandgaps.

Citation Download Citation

X. Zhao and Fow-Sen Choa "The effect of contact resistance in a broadband semiconductor optical amplifier using SAG techniques", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543847

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