30 March 2004 Characterization of crosstalk in HgCdTe n-on-p photovoltaic infrared arrays
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Abstract
In this paper, a theoretical and experimental study is carried out of crosstalk between neighboring devices within a back-side illuminated two dimensional HgCdTe photovoltaic infrared sensing array. Theoretical calculations are performed utilizing Dhar's model, a 2D simulated current approximation to crosstalk. Experimental results stem from spatial photo-response (SPR) measurements, which have been performed on HgCdTe MWIR photodiode arrays. The characterized devices are part of an 8x8 array fabricated using LPE grown p-type HgCdTe, with photodiodes fabricated in-house at The University of Western Australia. A scanning laser microscope is used to measure the spatial photo-response as a function of temperature. The theoretical model uses finite analysis techniques of probabilistic equations describing photogenerated carrier diffusion within the array. The Dhar model is a two dimensional model of simulated currents generated within the array. The basis of this model is the Kammins Fong (KF) model, a simplistic one dimensional representation of similar simulated currents. Inclusion of diffusion characteristics in the Dhar model is shown to result in greater levels of accuracy.
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L. Karp, Charles A. Musca, John M. Dell, Lorenzo Faraone, "Characterization of crosstalk in HgCdTe n-on-p photovoltaic infrared arrays", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); doi: 10.1117/12.522217; https://doi.org/10.1117/12.522217
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