30 March 2004 DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)
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The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9x10-12A (1.56x10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.
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Chun-Yuan Chen, Chun-Yuan Chen, Shiou-Ying Cheng, Shiou-Ying Cheng, Hung-Ming Chuang, Hung-Ming Chuang, Jing-Yuh Chen, Jing-Yuh Chen, Ssu-I Fu, Ssu-I Fu, Ching-Hsiu Tsai, Ching-Hsiu Tsai, Chi-Yuan Chang, Chi-Yuan Chang, Ching-Wen Hung, Ching-Wen Hung, Chun-Wei Chen, Chun-Wei Chen, Wen-Chau Liu, Wen-Chau Liu, } "DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); doi: 10.1117/12.522232; https://doi.org/10.1117/12.522232

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