InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source

PingJuan Niu; Haiyang Hu; Xunzhong Shang; Shudong Wu; Weilian Guo; Chang-yun Miao; Xiaoyun Li; Zhe Xu; Dan Qu

doi:10.1117/12.530182

30 March 2004 InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source

PingJuan Niu, Haiyang Hu, Xunzhong Shang, Shudong Wu, Weilian Guo, Chang-yun Miao, Xiaoyun Li, Zhe Xu, Dan Qu

Proceedings Volume 5274, Microelectronics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.530182
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

Lattice-matched InGaP on GaAs substrate was successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaP decomposition source. 0.5um-thick InGaP epilayer shows photoluminescence (PL) peak energy as large as 1.962eV, PL FWHM as small as 9.4meV, X-ray diffraction (XRD) rocking curve line-width as narrow as 25arcsec. The electron mobility of undoped, Si-doped InGaP layers measured by Hall are comparable to similar InGaP/GaAs heterojunction grown by SSMBE with other source or other growth techniques. Then the InGaP/GaAs HBT epiwafer is grown by this way. Beryllium(Be) diffusion is reduced by increasing the As/Ga flux ratio. Heterojuction Bipolar Transistor (HBT) with 75×75um² emitter mesa area fabricated using this structure yielded an excellent performance with high current gain. The results reveal that InGaP/GaAs heterojunction grown by the present growth way have great potential application for semiconductor devices.

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PingJuan Niu, Haiyang Hu, Xunzhong Shang, Shudong Wu, Weilian Guo, Chang-yun Miao, Xiaoyun Li, Zhe Xu, and Dan Qu "InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); https://doi.org/10.1117/12.530182

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