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30 March 2004 On-chip skin color detection using a triple-well CMOS process
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In this paper, a current-mode VLSI architecture enabling on read-out skin detection without the need for any on-chip memory elements is proposed. An important feature of the proposed architecture is that it removes the need for demosaicing. Color separation is achieved using the strong wavelength dependence of the absorption coefficient in silicon. This wavelength dependence causes a very shallow absorption of blue light and enables red light to penetrate deeply in silicon. A triple-well process, allowing a P-well to be placed inside an N-well, is chosen to fabricate three vertically integrated photodiodes acting as the RGB color detector for each pixel. Pixels of an input RGB image are classified as skin or non-skin pixels using a statistical skin color model, chosen to offer an acceptable trade-off between skin detection performance and implementation complexity. A single processing unit is used to classify all pixels of the input RGB image. This results in reduced mismatch and also in an increased pixel fill-factor. Furthermore, the proposed current-mode architecture is programmable, allowing external control of all classifier parameters to compensate for mismatch and changing lighting conditions.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Farid Boussaid, Douglas Chai, and Abdesselam Bouzerdoum "On-chip skin color detection using a triple-well CMOS process", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004);

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