Paper
30 March 2004 Y2O3-based oxide phosphor thin film electroluminescent devices
Author Affiliations +
Proceedings Volume 5274, Microelectronics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.521582
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia
Abstract
This article introduces newly developed multicomponent oxide host materials for electroluminescent phosphors. These are composed of Y2O3 and another binary compound such as Al2O3, Ga2O3, Gd2O3, In2O3, B2O3 or GeO2. The various Mn-activated (Y2O3)1-x-(oxide)x phosphor thin films were deposited while varying the composition by r.f. magnetron sputtering and postannealed. The obtained electroluminescent and photoluminescent emissions from the [(Y2O3)1-x-(oxide)x]:Mn phosphor thin-film emitting layers were strongly dependent on the preparation and postannealing conditions as well as on the composition. The highest luminance and photoluminescent intensity were obtained by using a (Y2O3)1-x-(oxide)x:Mn thin-film emitting layer prepared with an optimized composition. Both the obtained electroluminescent and photoluminescent characteristics were correlated to the crystallinity of the thin-film emitting layers. High luminances above 7000 cd/m2 were obtained in [(Y2O3)0.6-(GeO2)0.4]:Mn and [(Y2O3)0.5-(Ga2O3)0.5]:Mn thin-film electroluminescent devices fabricated under optimal condition and driven by an ac sinusoidal wave voltage at 1 kHz.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshihiro Miyata, Yasuyuki Suzuki, and Tadatsugu Minami "Y2O3-based oxide phosphor thin film electroluminescent devices", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); https://doi.org/10.1117/12.521582
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KEYWORDS
Manganese

Thin films

Thin film devices

Electroluminescence

Oxides

Gallium

Gadolinium

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