Atomic layer deposition (ALD) of TiO2 and Al2O3 thin films on silicon

David R. G. Mitchell; Gerry Triani; Darren J. Attard; Kim S. Finnie; Peter J. Evans; Christophe J. Barbe; John R. Bartlett

doi:10.1117/12.531795

2 April 2004 Atomic layer deposition (ALD) of TiO₂ and Al₂O₃ thin films on silicon

David R. G. Mitchell, Gerry Triani, Darren J. Attard, Kim S. Finnie, Peter J. Evans, Christophe J. Barbe, John R. Bartlett

Author Affiliations +

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.531795
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

The essential features of the ALD process involve sequentially saturating a surface with a (sub)monolayer of reactive species, such as a metal halide, then reacting it with a second species to form the required phase in-situ. Repetition of the reaction sequence allows the desired thickness to be deposited. The self-limiting nature of the reactions ensures excellent conformality, and sequential processing results in exquisite control over film thickness, albeit at rather slow deposition rates, typically <200nm/hr. We have been developing our capability with ALD deposition, to understand the influence of deposition parameters on the nature of TiO₂ and Al₂O₃ films (high and low refractive index respectively), and multilayer stacks thereof. These stacks have potential applications as anti-reflection coatings and optical filters. This paper will explore the evolution of structure in our films as a function of deposition parameters including temperature and substrate surface chemistry. A broad range of techniques have been applied to the study of these films, including cross sectional transmission electron microscopy, spectroscopic ellipsometry, secondary ion mass spectrometry etc. These have enabled a wealth of microstructural and compositional information on the films to be acquired, such as accurate film thickness, composition, crystallization sequence and orientation with respect to the substrate. The ALD method is shown to produce single layer films and multilayer stacks with exceptional uniformity and flatness, and in the case of stacks, chemically abrupt interfaces. We are currently extending this technology to the coating of polymeric substrates.

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David R. G. Mitchell, Gerry Triani, Darren J. Attard, Kim S. Finnie, Peter J. Evans, Christophe J. Barbe, and John R. Bartlett "Atomic layer deposition (ALD) of TiO₂ and Al₂O₃ thin films on silicon", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.531795

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