2 April 2004 Bi-Ti-O thin films for piezoelectric pressure sensors
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Abstract
Polycrystalline Bi-Ti-O thin films were prepared by multilayer deposition method using electron beam evaporation. The thin films were obtained by sequentially evaporating Bi2O3 / TiO2 layers on Si / SiO2 substrate followed by a heat treatment for 2 hours in air at 900 °C. The piezoelectric response of the sample was measured by pneumatic loading method. A pressure sensor was fabricated by annealed the deposited multilayer thin films on Si / SiO2 /Au substrate and Al was then deposited as top electrode. When an air pressure was applied and imparted on the sensor, electrical voltage was generated and measured using an electrometer. The sensor’s response was measured at three response cycles. It was found that the sensor has good voltage sensitivity and repeatability. The study shows the possibility to obtain Bi-Ti-O thin film pressure sensor by electron beam multilayer deposition.
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Cheong Wei Chong, Muhammad B. Yahaya, Muhamad Mat Salleh, "Bi-Ti-O thin films for piezoelectric pressure sensors", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.522281; https://doi.org/10.1117/12.522281
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