2 April 2004 Fabrication of thin film transistors on plastic substrates by spin etching and device transfer process
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This work presents a novel method to transfer thin-film transistors from a Si wafer to another flexible plastic substrate. First, high-performance poly-Si TFTs were fabricated on 1-μm thick SiO2 of a Si wafer and then adhered to a flexible plastic substrate by the optical adhesive. Next, the spin-etching process was utilized to remove the backside Si with SiO2 as a stopping layer. We have established a qualitative model to explain the relation between the chemical flow rate/rotation speed to the etching rate and the uniformity of Si removal. The Si etching rate is higher than 200 μm/min while maintaining Si to SiO2 selectivity of 250 under optimized spin-etching parameters. Compared to that before transference, no degradation or yield loss was found due to substrate bonding and Si spin-etching steps. Additionally, extrinsic stress shows little effect to the properties of poly-Si resistors on the flexible plastic substrate.
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Shuo-Cheng Wang, Chung-Ti Hsu, Ching-Fa Yeh, Jen-Chung Lou, "Fabrication of thin film transistors on plastic substrates by spin etching and device transfer process", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.522034; https://doi.org/10.1117/12.522034



Semiconducting wafers

Thin film devices

Thin films


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